Abstracts:Non-destructive and fast evaluation of thin diffusion barriers deposited on top of porous low-k dielectrics by spectroscopic ellipsometry is demonstrated. Studying Physical Vapor Deposited (PVD) CoTa and CoW alloys has shown that 3 nm and 5 nm thick barriers still have holes sufficient for penetration of neutral molecules. This study also detected damage to OSG low-k films which occurs during barrier deposition. VUV light emitted by Ar plasma which is used for metal target sputtering is likely to have caused this damage. For this reason, low-k films were placed under the barriers in order to adsorb moisture during air storage. W atoms also penetrated pores of low-k film during the deposition phase.

Abstracts:A micro-sized Ag paste was fabricated with the metal content of approximately 85% as a sinter-bonding material in this study. The sintering reactions and joint strengths of Ag sintered joints with three different surface finishes of Cu, Ag, and electroless Ni-immersion Au (ENIG) were evaluated at different sinter bonding times during the sintering process. Stable interfacial microstructures and relatively dense Ag sintered layers were formed in the three Ag sintered joints, and the interdiffusion behaviors between the Ag paste and substrate metals promoted in the formation of good metallurgical bonding during the Ag sintering process, regardless of surface finish. The bonding time of 10 min was sufficient for full sintering reactions between the chip and different substrate finishes. The shear strength did not increase with increased sintering time regardless of surface finish. The substrate metals strongly affected the die shear strengths of the Ag sintered joints, and the Ag-finished joint had a more stable interfacial microstructure and superior shear strength compared to the other metal-finished joints.

Abstracts:An electrical circuit, topology, and a fabrication technology have been developed for an ultra large multilayer memory matrix having a non-volatile memory, low energy consumption and large-scale integration of elements based on the cells incorporating complementary bipolar memristors and a Zener diode. Unlike memory matrices applicable in information technology, the proposed matrix can not only store information but also allow for voltage weighing of input signals that pass through memristors and their summing. What is more, low signal degradation when summing is achieved by selecting a special circuit for sending input impulses.