Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices.

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fieldeffect mobility xray diffraction xrd laser deposition 266 rare ptype conductivity optoelectronic devices force microscopy

Wencan Li,Jiao Cui,Weiwei Wang,Dahuai Zheng,Longfei Jia,Shahzad Saeed,Hongde Liu,Romano Rupp,Yongfa Kong,Jingjun Xu,.P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping. 12 (5),.

Wencan Li,Jiao Cui,Weiwei Wang,Dahuai Zheng,Longfei Jia,Shahzad Saeed,Hongde Liu,Romano Rupp,Yongfa Kong,Jingjun Xu,"P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping" 12

Wencan Li,Jiao Cui,Weiwei Wang,Dahuai Zheng,Longfei Jia,Shahzad Saeed,Hongde Liu,Romano Rupp,Yongfa Kong,Jingjun Xu,"P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping"