Abstract Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.

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femtosecond pulsed impuritymediated nearinfrared nir photoresponse lowcost broadband siliconbased photodetectors np ionimplantation

Ting Zhang,Bohan Liu,Waseem Ahmad,Yaoyu Xuan,Xiangxiao Ying,Zhijun Liu,Zhi Chen,Shibin Li,.Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes. 12 (1),.

Ting Zhang,Bohan Liu,Waseem Ahmad,Yaoyu Xuan,Xiangxiao Ying,Zhijun Liu,Zhi Chen,Shibin Li,"Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes" 12

Ting Zhang,Bohan Liu,Waseem Ahmad,Yaoyu Xuan,Xiangxiao Ying,Zhijun Liu,Zhi Chen,Shibin Li,"Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes"