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Nature Communications | Vol.9, Issue.1 | | Pages

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Abstract

Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and low resistance-area product.

Original Text (This is the original text for your reference.)

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

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Keywords

spintransfertorque switching junction resistance resistancearea product perpendicular magnetic tunnel junctions magnetic random access memories

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,.Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance. 9 (1),.

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