Ultrathin SnSe nanosheets (9–20 nm) are synthesized on molten polydimethylsiloxane by chemical vapor deposition. Thickness-dependent Raman features persist even with thickness over 10 nm. Meanwhile, anisotropy of field-effect mobility along b and c axes is observed above 240 K. Finally, thermopower can be easily modified by gate bias and temperature.

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920 gate bias vapor raman features of fieldeffect mobility

Junjie Li, Binghui Ge, Lihong Bao,Tengfei Pei, Zhang Zhou, Shiru Song, Changzhi Gu, Shixuan Du, Ruisong Ma, Liangmei Wu, Chengmin Shen, Haifang Yang, Hong-Jun Gao, Guocai Wang,.Epitaxy of Ultrathin SnSe Single Crystals on Polydimethylsiloxane: In-Plane Electrical Anisotropy and Gate-Tunable Thermopower. 2 (11),.

Junjie Li, et al."Epitaxy of Ultrathin SnSe Single Crystals on Polydimethylsiloxane: In-Plane Electrical Anisotropy and Gate-Tunable Thermopower" 2

Junjie Li, Binghui Ge, Lihong Bao,Tengfei Pei, Zhang Zhou, Shiru Song, Changzhi Gu, Shixuan Du, Ruisong Ma, Liangmei Wu, Chengmin Shen, Haifang Yang, Hong-Jun Gao, Guocai Wang,"Epitaxy of Ultrathin SnSe Single Crystals on Polydimethylsiloxane: In-Plane Electrical Anisotropy and Gate-Tunable Thermopower"