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Thin Solid Films | Vol.619, Issue.0 | | Pages 261-264

High mobility thin film transistors based on zinc nitride deposited at room temperature

Mayte Gómez-Castaño Jose Luis Pau Jose A. Luna-Lopez Miguel A. Dominguez Pedro Rosales

Abstract

In this work, the characterization of high mobility thin-film transistors based on zinc nitride films deposited at room temperature by magnetron radio-frequency sputtering is presented. The values extracted of field-effect mobility were >2cm²/Vs for long channel devices. For short channel devices, a reduction of the mobility values is found and, as a result of the analysis of the width-normalized resistance for different channel lengths and gate voltages, the reduction is attributed to the effects of a high contact resistance. The impact of the gate dielectric thickness on electrical characteristics is also presented.

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High mobility thin film transistors based on zinc nitride deposited at room temperature

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Keywords

contact electrical characteristics widthnormalized resistance magnetron radiofrequency nitride gate dielectric fieldeffect mobility thinfilm transistors

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Mayte Gómez-Castaño, Jose Luis Pau, Jose A. Luna-Lopez,Miguel A. Dominguez, Pedro Rosales,.High mobility thin film transistors based on zinc nitride deposited at room temperature. 619 (0),261-264.

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