A high-K/metal gate (HKMG)-stack (TiN/Al-doped-HfO_x/SiO₂/Si)-based bipolar resistive random access memory (RRAM) cell is proposed and fabricated by 28/20-nm HKMG CMOS compatible technology. Robust reliability behaviors (retention at $200~ {^{circ }}text {C} > 4 times 10^{4}$ s and endurance $> 10^{{{5^{vphantom {frac {}{,}}}}}}$ cycles) and ultralow switching current ( $<0.1mu text{A}$ for RESET and $<0.3mu text{A}$ for SET) are both demonstrated. The sub- $mu text{A}$ switching current and self-selection nonlinear $I$ – $V$ characteristics are attributed to the SiO₂ interfacial layer rather than the decrease of conductive filament size and oxygen vacancy ( $V_{O}$ ) density, which can be verified by HRTEM and measured conduction behavior. Therefore, robust reliability property is also achieved. The demonstrated excellent memory characteristics of HKMG stacked RRAM cell enable constituting 1-Mb workable crosspoint array even though the feature size scales down to 10 nm according to the HSPICE simulation.

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Hanming Wu, Jinfeng Kang, Lifeng Liu, Ziying Zhang, Weihai Bu, Yudi Zhao, Bing Chen, Bin Gao, Sijie Chen, Yong Chen, Xiaoyan Liu,Peng Huang,.Self-Selection RRAM Cell With Sub- $mu text{A}$ Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology. 63 (11),4295-4301.

Hanming Wu, et al."Self-Selection RRAM Cell With Sub- $mu text{A}$ Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology" 63

Hanming Wu, Jinfeng Kang, Lifeng Liu, Ziying Zhang, Weihai Bu, Yudi Zhao, Bing Chen, Bin Gao, Sijie Chen, Yong Chen, Xiaoyan Liu,Peng Huang,"Self-Selection RRAM Cell With Sub- $mu text{A}$ Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology"