Carrier mobility is a key parameter for the operation of electronic devices as it determines the ON state current and switching speed/frequency response of transistors. 2D phosphorene is considered as a potential candidate for field‐effect transistors due to its high mobility. Here it is proposed to further enhance the carrier mobility of phosphorene and device performance via strain engineering. A systematic ab initio investigation on the anisotropic electronic structure of few‐layer phosphorene reveals that the monolayer under 7.5–10% strain along zigzag direction shows an exceptional carrier mobility of ≈106 cm2 V−1 s−1, which is 10 times higher than the strain‐free case. The simulated device performance shows that strain‐engineered phosphorene–based field‐effect transistors demonstrate a cut‐off frequency of ≈1.14 THz with a gate length of 1.0 micron and 112 THz with a sub‐10 nm gate length.

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response carrier mobility on state current phosphorene strainfree cutoff frequency anisotropic electronic structure nm gate length switching phosphorenebased fieldeffect 7510 strain

Ruhao Fang, Xiangyuan Cui, Mansoor A. Khan, Catherine Stampfl, Simon P. Ringer, Rongkun Zheng,.Strain‐Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors. 5 (5),.

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