In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

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mobility enhancement structure aigzo tft intrinsic fieldeffect mobility amorphous indiumgalliumzincoxide thinfilm transistors generated periodic nanoconductor holographic lithography effective channel length

Donghyun Kim,Jaewook Jeong,Joonwoo Kim,Heonsu Jeon,Soon Moon Jeong,Yongtaek Hong,.Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor. 6 (8),.

Donghyun Kim,Jaewook Jeong,Joonwoo Kim,Heonsu Jeon,Soon Moon Jeong,Yongtaek Hong,"Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor" 6

Donghyun Kim,Jaewook Jeong,Joonwoo Kim,Heonsu Jeon,Soon Moon Jeong,Yongtaek Hong,"Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor"