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Microelectronics Reliability | Vol.80, Issue.0 | | Pages

Study of proton radiation effect to row hammer fault in DDR4 SDRAMs

Richard Wong Myungsang Park Sanghyeon Baeg Shi-Jie Wen Geunyong Bak Chulseung Lim Kyungbae Park Donghyuk Yun

Abstract

This paper shares the effects of row hammer fault through high-energy proton radiation. The significance of row hammer fault is highlighted in terms of two different technologies in DDR4 SDRAM.

Original Text (This is the original text for your reference.)

Study of proton radiation effect to row hammer fault in DDR4 SDRAMs

This paper shares the effects of row hammer fault through high-energy proton radiation. The significance of row hammer fault is highlighted in terms of two different technologies in DDR4 SDRAM.

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Keywords

row hammer fault proton

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Richard Wong, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Geunyong Bak,Chulseung Lim, Kyungbae Park, Donghyuk Yun,.Study of proton radiation effect to row hammer fault in DDR4 SDRAMs. 80 (0),.

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