We demonstrate a narrow-linewidth heterogeneously integrated Si/III–V laser, where the current confinement in the III–V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique. This method provides effective electrical isolation as well as III–V surface passivation, and a pathway for high-efficiency diode injection laser performance. This method also offers increased compatibility with potentially high-temperature annealing processes. The lasers shown here possess a threshold current of as low as 60 mA and a single-facet output power of more than 3 mW at 20 °C. A linewidth of 28 kHz at 1574.8 nm is obtained at a current of 200 mA ( $I = 3.3 times I_{mathrm{ th}}$ ). Single-mode operation is achieved with a side-mode suppression ratio larger than 55 dB.

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sidemode suppression ratio electrical isolation annealing diode injection laser surface passivation current confinement iiix2013v structure narrowlinewidth heterogeneously integrated siiiix2013v laser ionimplantation

Amnon Yariv, Mark Harfouche, Christos T. Santis, George Rakuljic,Huolei Wang, Dongwan Kim, Naresh Satyan,.Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers. 29 (24),2199-2202.

Amnon Yariv, et al."Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers" 29

Amnon Yariv, Mark Harfouche, Christos T. Santis, George Rakuljic,Huolei Wang, Dongwan Kim, Naresh Satyan,"Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers"