This paper presents an accurate and computationally efficient method to calculate the drain-source saturation voltage V_dsat of dual-gate (i.e., four-terminal) junction field-effect transistors. The method accounts for velocity saturation and for channel thickness modulation by any combination of MOS or p-n junction gates. In three iterations, it achieves an error of less than 2%. Our algorithm converges significantly faster than the direct application of the Newton-Raphson method because of careful selection of an initial value and the leverage of the convex and concave nature of the curves whose intersection defines V_dsat. The method is applied to both the exact model for I_ds and an approximated form based on mid-point-potential linearization, and is verified by comparison with numerical simulation.

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midpointpotential linearization curves drainsource saturation voltage vsubdsatsub of dualgate ie fourterminal junction fieldeffect velocity saturation newtonraphson method simulation mos or pn junction isubdssub convex and concave nature channel thickness modulation

C.C.McAndrew,K.Xia, B.Grote,.Dual-Gate JFET Modeling I: Generalization to Include MOS Gates and Efficient Method to Calculate Drain–Source Saturation Voltage. (),1408-1415.

C.C.McAndrew,K.Xia, B.Grote,"Dual-Gate JFET Modeling I: Generalization to Include MOS Gates and Efficient Method to Calculate Drain–Source Saturation Voltage"

C.C.McAndrew,K.Xia, B.Grote,"Dual-Gate JFET Modeling I: Generalization to Include MOS Gates and Efficient Method to Calculate Drain–Source Saturation Voltage"