Emerging non-volatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) exhibit a unique set of characteristics that make them promising candidates for the next generation of low-cost, low-power, tiny, and secure physical unclonable functions (PUFs). Their underlying stochastic ionic conduction behavior, intrinsic nonlinear current-voltage characteristics, and their well-known nano-fabrication process variability might normally be considered disadvantageous ReRAM features. However, using a combination of a novel architecture and special peripheral circuitry, this paper exploits these non-idealities in a physical one-way function, nonlinear resistive PUF, potentially applicable to a variety of cyber-physical security applications. We experimentally verify the performance of valency change mechanism (VCM)-based ReRAM in nano-fabricated crossbar arrays across multiple dies and runs. In addition to supporting a massive pool of challenge-response pairs (CRPs), using a combination of experiment and simulation our proposed PUF exhibits a reliability of 98.67%, a uniqueness of 49.85%, a diffuseness of 49.86%, a uniformity of 47.28%, and a bit-aliasing of 47.48%.

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wellknown nanofabrication process variability physical oneway function nonlinear resistive puf lowcost lowpower tiny and secure physical unclonable functions reram features however bitaliasing reliability cyberphysical security 4728x0025 valency change mechanism vcmbased reram nanofabricated crossbar nonvolatile reductionoxidation redoxbased resistive switching memories stochastic ionic conduction behavior intrinsic nonlinear currentvoltage characteristics peripheral

Jeeson Kim,.A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory. 13 (2),437-448.

Jeeson Kim,"A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory" 13

Jeeson Kim,"A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory"