In this study, metal-semiconductor-metal (MSM) ultraviolet photodetector based on NiO film was fabricated on n-type Si (100) substrate. The NiO film was deposited on Si (100) by using RF magnetron sputtering of NiO target at 100°C. The film showed cubic bunsenite structure with (200) preferred orientation as confirmed through XRD analysis. The band gap of NiO film was evaluated from UV–vis reflectance specroscopy and it was found to be 3.38eV. To study the photodetection performance of NiO film, Au metal contacts were deposited on the film through RF sputtering system. The photodetection characteristics of the photodetector such as spectral response, photosensivity, internal gain, rise and fall time were investigated. The Au/NiO/Au MSM UV device displayed maximum value of responsivity (4.5A/W) upon exposure to 365nm UV light at 5V bias. The photosensivity was calculated to be 6.4×10³% whereas the internal gain of the photodetector was estimated to be 6.5×10¹. In addition, the rising and falling time were found to be 266ms and 200ms, respectively. The fabricated device exhibited excellent stability and repeatability in its performance.

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spectral response photosensivity sp025nm uv light nio film internal gain rise and fall time msm uv device study metalsemiconductormetal msm ultraviolet photodetector cubic bunsenite structure au metal contacts responsivity 45hsp rising magnetron sputtering photodetection characteristics falling time performance uvvis reflectance specroscopy

Naveed Afzal,Anas A. Ahmed, Mutharasu Devarajan,.Fabrication and characterization of high performance MSM UV photodetector based on NiO film. 262 (0),.

Naveed Afzal,Anas A. Ahmed, Mutharasu Devarajan,"Fabrication and characterization of high performance MSM UV photodetector based on NiO film" 262

Naveed Afzal,Anas A. Ahmed, Mutharasu Devarajan,"Fabrication and characterization of high performance MSM UV photodetector based on NiO film"