Since silicon nitride coatings on silicon dioxide are attractive for the semiconductor and electronics industries, cognizance of their formation kinetics is crucial for optimization of production parameters. In this contribution, the deposition kinetics (rate constant and activation energy) of Si3N4 by the hybrid system chemical vapor infiltration route (HYSY-CVI), starting from N-2:NH3 and SiF4 (produced by the decomposition of Na2SiF6) has been studied. The deposition rate equation for Si3N4 was established from several possible gas-phase or surface reaction steps involved in the growth of Si3N4 coatings onto silica-derived rice husk ash (RHA). Based on a judicious analysis of four different models, it was found that Freundlich's adsorption model satisfactorily represents the rate of Si3N4 deposition process onto RHA. (C) 2017 Wiley Periodicals, Inc.

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formation kinetics hybrid system chemical vapor infiltration route n2nh3 gasphase or surface reaction activation energy deposition kinetics rate constant rice husk ash sif4 of production na2sif6 silicon nitride coatings adsorption model semiconductor and electronics models

.Kinetics of Silicon Nitride Formation on SiO2-Derived Rice Husk Ash Using the Chemical Vapor Infiltration Method. 49 (4),.

"Kinetics of Silicon Nitride Formation on SiO2-Derived Rice Husk Ash Using the Chemical Vapor Infiltration Method" 49

"Kinetics of Silicon Nitride Formation on SiO2-Derived Rice Husk Ash Using the Chemical Vapor Infiltration Method"